Diffusion and Activation of Arsenic in Silicon Germanium Alloys

properties as a n-type dopant in Silicon Germanium (SiGe), to enable the fabrication of a wide range of devices. With the recent success of the strained Si MOSFET, new markets are expected to be developed based upon strained Si/relaxed SiGe CMOS circuits. An understanding of n-type dopant diffusion in SiGe, specifically the formation of the source/drain regions in the NMOS and the n-body region in the PMOS, is essential for the success of this technology. In addition, n-type SiGe fabrication technology is expected to be important for the development of other devices such as thermoelectric generators, novel MOSFET structures that utilize SiGe source/drain contacts, and the pnp HBT.